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SK Hynix HMT325U6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SK Hynix HMT325U6CFR8C-PB 2GB vs SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB 需要考虑的原因
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 43
    左右 -79% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 24
  • 读取速度，GB/s
    12.3 left arrow 16.7
  • 写入速度，GB/s
    8.1 left arrow 12.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 2904

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
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Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 99P5723-006.A00G 8GB
Kingston 99P5723-006.A00G 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
G Skill Intl F4-3466C18-8GSXW 8GB
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Samsung M3 93T5750CZA-CE6 2GB
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Corsair CMZ16GX3M2A2400C10 8GB
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Micron Technology 16ATF2G64HZ-2G6E3 16GB
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Corsair CMSX32GX4M2A3200C22 16GB
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Kingston KF548C38-16 16GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMT32GX4M2C3600C18 16GB
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A-DATA Technology VDQVE1B16 2GB
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Micron Technology 16ATF2G64AZ-2G3A1 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
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SK Hynix HMA82GS6DJR8N-XN 16GB
内存RAM
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Samsung M391B5673FH0-CH9 2GB
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G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
Micron Technology 8KTF51264HZ-1G6E1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
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G Skill Intl F4-3600C14-8GTRSB 8GB
内存RAM
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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G Skill Intl F4-3600C16-16GTZR 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
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Essencore Limited KD48GU881-26N190D 8GB
内存RAM