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SK Hynix HMT351R7EFR8C-RD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
比较
SK Hynix HMT351R7EFR8C-RD 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
总分
SK Hynix HMT351R7EFR8C-RD 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
37
左右 -28% 更低的延时
更快的读取速度,GB/s
12.2
9.8
测试中的平均数值
更快的写入速度,GB/s
9.6
7.2
测试中的平均数值
更高的内存带宽,mbps
17000
14900
左右 1.14 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT351R7EFR8C-RD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
29
读取速度,GB/s
9.8
12.2
写入速度,GB/s
7.2
9.6
内存带宽,mbps
14900
17000
Other
描述
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-10-9-28 / 1866 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2065
2443
SK Hynix HMT351R7EFR8C-RD 4GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-010.A00LF 2GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMV16GX4M1A2133C15 16GB
Strontium EVMT8G1600U86S 8GB
Corsair CMSX8GX4M2A2400C16 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905630-007.A00G 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Transcend Information JM2666HSE-16G 16GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F4-2666C18-32GRS 32GB
Kingston ACR26D4S9S8ME-8 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Corsair CMG16GX4M2E3200C16 8GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A1K43BB1-CRC 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Samsung M471B5273CH0-CH9 4GB
Teikon TMA851S6CJR6N-VKSC 4GB
报告一个错误
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Bug description
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