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SK Hynix HMT351U6CFR8C-H9 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

SK Hynix HMT351U6CFR8C-H9 4GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

总分
star star star star star
SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

总分
star star star star star
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

差异 规格 评论

差异

SK Hynix HMT351U6CFR8C-H9 4GB 需要考虑的原因
SK Hynix HMT351U6CFR8C-H9 4GB
报告一个错误
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB 需要考虑的原因
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    14 left arrow 42
    左右 -200% 更低的延时
  • 更快的读取速度，GB/s
    26.4 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.8 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351U6CFR8C-H9 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 14
  • 读取速度，GB/s
    13.7 left arrow 26.4
  • 写入速度，GB/s
    8.3 left arrow 19.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2152 left arrow 4362

SK Hynix HMT351U6CFR8C-H9 4GB RAM的比较

SK Hynix HMT451U7BFR8C-RD 4GB
Kllisre KRE-D3S1600M/8G 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
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