SK Hynix HMT41GS6AFR8A-PB 8GB vs Corsair CMD16GX4M4B3200C16-R 4GB

总分

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

总分

Corsair CMD16GX4M4B3200C16-R 4GB

Corsair CMD16GX4M4B3200C16-R 4GB

差异规格评论

差异

SK Hynix HMT41GS6AFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6AFR8A-PB 8GB

报告一个错误

Corsair CMD16GX4M4B3200C16-R 4GB

需要考虑的原因
Corsair CMD16GX4M4B3200C16-R 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 48

左右 -66% 更低的延时
更快的读取速度，GB/s

16.7 11.6

测试中的平均数值
更快的写入速度，GB/s

14.4 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GS6AFR8A-PB 8GB

Corsair CMD16GX4M4B3200C16-R 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 29
读取速度，GB/s

11.6 16.7
写入速度，GB/s

7.8 14.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2029 3324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64AZ-2G3A2 8GB

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Corsair CMK16GX4M2G4000C16 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Patriot Memory (PDP Systems) 2133 C14 Series 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung M393B5170FH0-CH9 4GB

Kingston 9905624-036.A00G 8GB

Kingston 9905624-036.A00G 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

Avant Technology J644GU44J1293NF 32GB

Avant Technology J644GU44J1293NF 32GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston HP24D4U7S8MBP-8 8GB

Kingston HP24D4U7S8MBP-8 8GB