SK Hynix HMT41GS6AFR8A-PB 8GB vs Corsair CMSX16GX4M2A3000C18 8GB

总分

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

总分

Corsair CMSX16GX4M2A3000C18 8GB

Corsair CMSX16GX4M2A3000C18 8GB

差异规格评论

差异

SK Hynix HMT41GS6AFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6AFR8A-PB 8GB

报告一个错误

Corsair CMSX16GX4M2A3000C18 8GB

需要考虑的原因
Corsair CMSX16GX4M2A3000C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 48

左右 -60% 更低的延时
更快的读取速度，GB/s

16.9 11.6

测试中的平均数值
更快的写入速度，GB/s

13.6 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GS6AFR8A-PB 8GB

Corsair CMSX16GX4M2A3000C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 30
读取速度，GB/s

11.6 16.9
写入速度，GB/s

7.8 13.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2029 3050

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KF3200C16D4/8GX 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Kingston 99U5403-050.A00LF 4GB

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Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

SK Hynix HMA82GU6AFR8N-UH 16GB

SK Hynix HMA82GU6AFR8N-UH 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

UMAX Technology 16GB

UMAX Technology 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB