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SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB vs Crucial Technology CT8G4SFD8213.C16FBD1 8GB

总分
star star star star star
SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

总分
star star star star star
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

差异 规格 评论

差异

SK Hynix HMT41GS6AFR8A-PB 8GB 需要考虑的原因
SK Hynix HMT41GS6AFR8A-PB 8GB
报告一个错误
Crucial Technology CT8G4SFD8213.C16FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 48
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    14 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 36
  • 读取速度，GB/s
    11.6 left arrow 14.0
  • 写入速度，GB/s
    7.8 left arrow 10.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2029 left arrow 2416

SK Hynix HMT41GS6AFR8A-PB 8GB RAM的比较

Crucial Technology CT102464BF160B.16F 8GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
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Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung V-GeN D4S8GL24A8 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
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Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-2400C16-8GFXR 8GB
G Skill Intl F4-2400C16-8GFXR 8GB
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Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
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Crucial Technology BL8G30C15U4B.8FE 8GB
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Samsung M378T5663QZ3-CF7 2GB
Transcend Information TS2GLH64V6B 16GB
Transcend Information TS2GLH64V6B 16GB
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A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
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Samsung 1600 CL10 Series 8GB
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Mushkin 99[2/7/4]189F 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston ACR26D4S9S8ME-8 8GB
Kingston ACR26D4S9S8ME-8 8GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
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Corsair CM4X4GD3000C16K2 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Crucial Technology BL16G26C16U4B.16FD 16GB
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