SK Hynix HMT41GS6BFR8A-PB 8GB vs Crucial Technology CB8GS2400.C8D 8GB

总分

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

总分

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

差异规格评论

差异

SK Hynix HMT41GS6BFR8A-PB 8GB

需要考虑的原因
SK Hynix HMT41GS6BFR8A-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 89

左右 48% 更低的延时
更快的写入速度，GB/s

8.0 6.8

测试中的平均数值

Crucial Technology CB8GS2400.C8D 8GB

需要考虑的原因
Crucial Technology CB8GS2400.C8D 8GB

报告一个错误

更快的读取速度，GB/s

13.6 12.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GS6BFR8A-PB 8GB

Crucial Technology CB8GS2400.C8D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 89
读取速度，GB/s

12.1 13.6
写入速度，GB/s

8.0 6.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2088 1518

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston 9905469-143.A00LF 4GB

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Panram International Corporation M424016 4GB

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Samsung M393B1G70BH0-CK0 8GB

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Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

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Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Kingston X75V1H-MIE 32GB

Kingston X75V1H-MIE 32GB