SK Hynix HMT41GU7MFR8A-H9 8GB vs Kingston KHX2933C17D4/16G 16GB

总分

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

总分

Kingston KHX2933C17D4/16G 16GB

Kingston KHX2933C17D4/16G 16GB

差异规格评论

差异

SK Hynix HMT41GU7MFR8A-H9 8GB

需要考虑的原因
SK Hynix HMT41GU7MFR8A-H9 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

Kingston KHX2933C17D4/16G 16GB

需要考虑的原因
Kingston KHX2933C17D4/16G 16GB

报告一个错误

更快的读取速度，GB/s

17.1 14.8

测试中的平均数值
更快的写入速度，GB/s

13.8 9.0

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7MFR8A-H9 8GB

Kingston KHX2933C17D4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

14.8 17.1
写入速度，GB/s

9.0 13.8
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2650 3349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Corsair CMD32GX4M4C3200C14M 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Crucial Technology CT16G4DFD8266.M16FD 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905625-076.A00G 8GB

Kingston 9905625-076.A00G 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB