SK Hynix HMT41GU7MFR8A-H9 8GB vs Samsung M393A2G40EB1-CPB 16GB

总分

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

总分

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

差异规格评论

差异

SK Hynix HMT41GU7MFR8A-H9 8GB

需要考虑的原因
SK Hynix HMT41GU7MFR8A-H9 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 56

左右 52% 更低的延时
更快的读取速度，GB/s

14.8 9.3

测试中的平均数值
更快的写入速度，GB/s

9.0 7.7

测试中的平均数值

Samsung M393A2G40EB1-CPB 16GB

需要考虑的原因
Samsung M393A2G40EB1-CPB 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT41GU7MFR8A-H9 8GB

Samsung M393A2G40EB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 56
读取速度，GB/s

14.8 9.3
写入速度，GB/s

9.0 7.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2650 2200

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SH564128FH8NZQNSCG 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Kingston 9965669-025.A00G 8GB

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Ramaxel Technology RMSA3260ME78HAF-2666 8GB

Ramaxel Technology RMSA3260ME78HAF-2666 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KHX2133C13S4/4G 4GB

Kingston KHX2133C13S4/4G 4GB