SK Hynix HMT425S6CFR6A-PB 2GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Nanya Technology NT2GC64B88B0NS-CG 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 43

左右 5% 更低的延时
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Nanya Technology NT2GC64B88B0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B88B0NS-CG 2GB

报告一个错误

更快的读取速度，GB/s

11.1 10.1

测试中的平均数值
更快的写入速度，GB/s

7.3 7.1

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 43
读取速度，GB/s

10.1 11.1
写入速度，GB/s

7.1 7.3
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1484 1357

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA41GU6AFR8N-TF 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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Corsair CMSX32GX4M1A2666C18 32GB

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Corsair CM4S16GL3200K18K2 16GB

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Kingston KHX1600C9D3/4G 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N