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SK Hynix HMT42GR7AFR4C-RD 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB vs Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

总分
star star star star star
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

差异 规格 评论

差异

SK Hynix HMT42GR7AFR4C-RD 16GB 需要考虑的原因
SK Hynix HMT42GR7AFR4C-RD 16GB
报告一个错误
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 52
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 9.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14900
    左右 1.43 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT42GR7AFR4C-RD 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 39
  • 读取速度，GB/s
    9.9 left arrow 15.7
  • 写入速度，GB/s
    8.2 left arrow 11.1
  • 内存带宽，mbps
    14900 left arrow 21300
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2285 left arrow 2725

SK Hynix HMT42GR7AFR4C-RD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT42GR7AFR4C-RD 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
内存RAM
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Corsair CMR32GX4M4C3466C16 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Corsair CMW32GX4M2C3333C16 16GB
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Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
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Corsair CMD16GX4M4B3200C16 4GB
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Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
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Corsair CM4X16GC3200C16K2 16GB
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Corsair CMV8GX3M1A1333C9 8GB
Corsair CMV8GX3M1A1333C9 8GB
G Skill Intl F4-2133C15-8GFX 8GB
G Skill Intl F4-2133C15-8GFX 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-32GTZN 32GB
G Skill Intl F4-3200C16-32GTZN 32GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
内存RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
内存RAM
SK Hynix HMT42GR7AFR4C-RD 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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G Skill Intl F4-2400C16-16GFX 16GB
内存RAM