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SK Hynix HMT42GR7AFR4C-RD 16GB
Samsung V-GeN D4S4GL32A8TL 4GB

SK Hynix HMT42GR7AFR4C-RD 16GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分
star star star star star
SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

总分
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异 规格 评论

差异

SK Hynix HMT42GR7AFR4C-RD 16GB 需要考虑的原因
SK Hynix HMT42GR7AFR4C-RD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 58
    左右 10% 更低的延时
Samsung V-GeN D4S4GL32A8TL 4GB 需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 9.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 14900
    左右 1.29 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT42GR7AFR4C-RD 16GB
Samsung V-GeN D4S4GL32A8TL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 58
  • 读取速度，GB/s
    9.9 left arrow 18.5
  • 写入速度，GB/s
    8.2 left arrow 9.5
  • 内存带宽，mbps
    14900 left arrow 19200
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2285 left arrow 1998

SK Hynix HMT42GR7AFR4C-RD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T5663FB3-CF7 2GB
Samsung M3 78T5663FB3-CF7 2GB
Corsair CMSX32GX4M2A3000C16 16GB
Corsair CMSX32GX4M2A3000C16 16GB
内存RAM
SK Hynix HMT42GR7AFR4C-RD 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Samsung V-GeN D4S4GL32A8TL 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Kingston RB26D4U9D8MEH-16 16GB
Kingston RB26D4U9D8MEH-16 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Apacer Technology 78.CAGN7.4000C 8GB
Apacer Technology 78.CAGN7.4000C 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
内存RAM
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-3000C16-8GSXWB 8GB
G Skill Intl F4-3000C16-8GSXWB 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM