SK Hynix HMT451S6BFR8A-RD 4GB vs Crucial Technology BLS4G3N18AES4.16FE 4GB

总分

SK Hynix HMT451S6BFR8A-RD 4GB

SK Hynix HMT451S6BFR8A-RD 4GB

总分

Crucial Technology BLS4G3N18AES4.16FE 4GB

Crucial Technology BLS4G3N18AES4.16FE 4GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-RD 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-RD 4GB

报告一个错误

更快的读取速度，GB/s

14 13.3

测试中的平均数值
更高的内存带宽，mbps

14900 14200

左右 1.05% 更高的带宽

Crucial Technology BLS4G3N18AES4.16FE 4GB

需要考虑的原因
Crucial Technology BLS4G3N18AES4.16FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的写入速度，GB/s

10.4 9.5

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-RD 4GB

Crucial Technology BLS4G3N18AES4.16FE 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

26 24
读取速度，GB/s

14.0 13.3
写入速度，GB/s

9.5 10.4
内存带宽，mbps

14900 14200

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC3-14200, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 12 13
时序/时钟速度

9-10-9-28 / 1866 MHz no data
排名PassMark (越多越好)

2289 2258

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1G44AB0-CWE 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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King Tiger Technology Tigo-X3-3200MHz-8G 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Corsair CMZ16GX3M2A1600C11 8GB

Corsair CMZ16GX3M2A1600C11 8GB

Kingston 99U5663-001.A00G 16GB

Kingston 99U5663-001.A00G 16GB