SK Hynix HMT451U7BFR8C-RD 4GB vs Essencore Limited KD44GU480-26N160T 4GB

总分

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

总分

Essencore Limited KD44GU480-26N160T 4GB

Essencore Limited KD44GU480-26N160T 4GB

差异规格评论

差异

SK Hynix HMT451U7BFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT451U7BFR8C-RD 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 69

左右 39% 更低的延时
更快的写入速度，GB/s

9.0 7.4

测试中的平均数值

Essencore Limited KD44GU480-26N160T 4GB

需要考虑的原因
Essencore Limited KD44GU480-26N160T 4GB

报告一个错误

更快的读取速度，GB/s

15.3 12.8

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451U7BFR8C-RD 4GB

Essencore Limited KD44GU480-26N160T 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 69
读取速度，GB/s

12.8 15.3
写入速度，GB/s

9.0 7.4
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 1576

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BLS4G4D240FSB.8FBD 4GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Corsair CMU64GX4M4C3000C15 16GB

Corsair CMU64GX4M4C3000C15 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMT16GX4M2K4000C19 8GB

Corsair CMT16GX4M2K4000C19 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Asgard VMA45UG-MEC1U2BQ2 8GB

Asgard VMA45UG-MEC1U2BQ2 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Super Talent F24SB8GH 8GB

Super Talent F24SB8GH 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston KHX2666C15/16GX 16GB

Kingston KHX2666C15/16GX 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology CT8G4SFS832A.C8FE 8GB