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SK Hynix HMT451U7BFR8C-RD 4GB
Kingston KHX2800C14D4/4GX 4GB

SK Hynix HMT451U7BFR8C-RD 4GB vs Kingston KHX2800C14D4/4GX 4GB

总分
star star star star star
SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

总分
star star star star star
Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB

差异 规格 评论

差异

SK Hynix HMT451U7BFR8C-RD 4GB 需要考虑的原因
SK Hynix HMT451U7BFR8C-RD 4GB
报告一个错误
Kingston KHX2800C14D4/4GX 4GB 需要考虑的原因
Kingston KHX2800C14D4/4GX 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 42
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451U7BFR8C-RD 4GB
Kingston KHX2800C14D4/4GX 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 30
  • 读取速度，GB/s
    12.8 left arrow 16.8
  • 写入速度，GB/s
    9.0 left arrow 13.2
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 8 13 18 23 29 34 35 36 37 38
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 2996

SK Hynix HMT451U7BFR8C-RD 4GB RAM的比较

Kingston 99U5471-056.A00LF 8GB
SK Hynix HMT351U6CFR8C-H9 4GB

Kingston KHX2800C14D4/4GX 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CM4B16G7L2666A16K2-O 16GB
Corsair CM4B16G7L2666A16K2-O 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Kingston 9905678-023.A00G 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905630-052.A00G 16GB
Kingston 9905630-052.A00G 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
Corsair CMR64GX4M8C3200C16 8GB
Corsair CMR64GX4M8C3200C16 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Mushkin 99[2/7/4]202F 4GB
Mushkin 99[2/7/4]202F 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM