RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CT8G4DFS824A.M8FD 8GB

SK Hynix HYMP112S64CP6-S6 1GB vs Crucial Technology CT8G4DFS824A.M8FD 8GB

总分
star star star star star
SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分
star star star star star
Crucial Technology CT8G4DFS824A.M8FD 8GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

差异 规格 评论

差异

SK Hynix HYMP112S64CP6-S6 1GB 需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.1
    测试中的平均数值
Crucial Technology CT8G4DFS824A.M8FD 8GB 需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 65
    左右 -103% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 1,711.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 32
  • 读取速度，GB/s
    4,018.7 left arrow 16.1
  • 写入速度，GB/s
    1,711.1 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    513 left arrow 2968

SK Hynix HYMP112S64CP6-S6 1GB RAM的比较

Corsair VSA2GSDS667C4 2GB
SK Hynix HYMP125S64CP8-S6 2GB

Crucial Technology CT8G4DFS824A.M8FD 8GB RAM的比较

Samsung M378A1G43EB1-CPB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Kingston HP32D4U8D8HC-16X 16GB
Kingston HP32D4U8D8HC-16X 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMU32GX4M4A2666C16 8GB
Corsair CMU32GX4M4A2666C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB
SK Hynix HMA82GS6DJR8N-WM 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-2800C14-16GTZ 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Apacer Technology GD2.1527WH.002 8GB
Apacer Technology GD2.1527WH.002 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Apacer Technology GD2.1527CS.001 8GB
Apacer Technology GD2.1527CS.001 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Apacer Technology 78.BAGNF.40C0B 4GB
Apacer Technology 78.BAGNF.40C0B 4GB
内存RAM