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SK Hynix HYMP112S64CP6-S6 1GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

SK Hynix HYMP112S64CP6-S6 1GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

总分
star star star star star
SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分
star star star star star
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

差异 规格 评论

差异

SK Hynix HYMP112S64CP6-S6 1GB 需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.4
    测试中的平均数值
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB 需要考虑的原因
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 65
    左右 -141% 更低的延时
  • 更快的写入速度，GB/s
    14.5 left arrow 1,711.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112S64CP6-S6 1GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 27
  • 读取速度，GB/s
    4,018.7 left arrow 17.4
  • 写入速度，GB/s
    1,711.1 left arrow 14.5
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    513 left arrow 3692

SK Hynix HYMP112S64CP6-S6 1GB RAM的比较

Corsair VSA2GSDS667C4 2GB
SK Hynix HYMP125S64CP8-S6 2GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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SK Hynix HYMP112S64CP6-S6 1GB
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