SK Hynix HYMP112U64CP8-S5 1GB vs Corsair CMD32GX4M4B3466C16 8GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 15.7

测试中的平均数值
更快的写入速度，GB/s

2,978.2 17.2

测试中的平均数值

Corsair CMD32GX4M4B3466C16 8GB

需要考虑的原因
Corsair CMD32GX4M4B3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 66

左右 -200% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMD32GX4M4B3466C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 22
读取速度，GB/s

2,929.1 15.7
写入速度，GB/s

2,978.2 17.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 3671

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C14-16GTZR 16GB

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A-DATA Technology DDR3 1333G 2GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Golden Empire CL15-17-17 D4-3200 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston KF3600C16D4/16GX 16GB

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Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-3200C16-8GRS 8GB

EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

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Nanya Technology M2F2G64CB88B7N-CG 2GB

Nanya Technology M2F2G64CB88B7N-CG 2GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB