SK Hynix HYMP112U64CP8-S5 1GB vs Corsair CMW16GX4M2C3200C16 8GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Corsair CMW16GX4M2C3200C16 8GB

Corsair CMW16GX4M2C3200C16 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 18.4

测试中的平均数值
更快的写入速度，GB/s

2,978.2 14.7

测试中的平均数值

Corsair CMW16GX4M2C3200C16 8GB

需要考虑的原因
Corsair CMW16GX4M2C3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 66

左右 -136% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMW16GX4M2C3200C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 28
读取速度，GB/s

2,929.1 18.4
写入速度，GB/s

2,978.2 14.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 3525

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Kingston KF552C40-16 16GB

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Micron Technology 16ATF2G64AZ-3G2J1 16GB

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Mushkin MR[A/B]4U320LLLM8G 8GB

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A-DATA Technology DDR4 2400 16GB

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Micron Technology 8ATF1G64HZ-2G6E1 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Heoriady HX2666CX15D4/4G 4GB

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AMD R538G1601U2S 8GB

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Golden Empire CL16-20-20 D4-3200 16GB