SK Hynix HYMP112U64CP8-S5 1GB vs G Skill Intl F4-3200C14-8GTZR 8GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

G Skill Intl F4-3200C14-8GTZR 8GB

G Skill Intl F4-3200C14-8GTZR 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 19.4

测试中的平均数值
更快的写入速度，GB/s

2,978.2 15.6

测试中的平均数值

G Skill Intl F4-3200C14-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 66

左右 -154% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3200C14-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 26
读取速度，GB/s

2,929.1 19.4
写入速度，GB/s

2,978.2 15.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 3756

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T5663CZ3-CE6 2GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

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Team Group Inc. TEAMGROUP-UD4-3733 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Mushkin MRB4U300GJJM16G 16GB

Mushkin MRB4U300GJJM16G 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CM4X32GC3200C16K2E 32GB

Corsair CM4X32GC3200C16K2E 32GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB