SK Hynix HYMP112U64CP8-S5 1GB vs G Skill Intl F4-3333C16-8GTZ 8GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的写入速度，GB/s

2,978.2 17.2

测试中的平均数值

G Skill Intl F4-3333C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 66

左右 -187% 更低的延时
更快的读取速度，GB/s

21.2 2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3333C16-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 23
读取速度，GB/s

2,929.1 21.2
写入速度，GB/s

2,978.2 17.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 4043

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-4000C18-8GVK 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-2133C15-8GFT 8GB

G Skill Intl F4-2133C15-8GFT 8GB