SK Hynix HYMP112U64CP8-S5 1GB vs Kingston 9905701-032.A00G 16GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Kingston 9905701-032.A00G 16GB

Kingston 9905701-032.A00G 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 15.6

测试中的平均数值

Kingston 9905701-032.A00G 16GB

需要考虑的原因
Kingston 9905701-032.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

65 66

左右 -2% 更低的延时
更快的写入速度，GB/s

7.3 2,978.2

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9905701-032.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 65
读取速度，GB/s

2,929.1 15.6
写入速度，GB/s

2,978.2 7.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

511 1820

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMR64GX4M4C3333C16 16GB

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Samsung M471A5244CB0-CWE 4GB

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Kingston XJ69DF-MIE2 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

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Kingston KP4T2F-PSB 4GB

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Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology CT8G4SFS824A.C8FDD1 8GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston KF3600C16D4/8GX 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Transcend Information JM2666HLB-8G 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

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SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Kingston 99U5711-001.A00G 4GB