SK Hynix HYMP112U64CP8-S6 1GB vs Kingston X2YH1K-MIE-NX 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Kingston X2YH1K-MIE-NX 16GB

Kingston X2YH1K-MIE-NX 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 18.7

测试中的平均数值
更快的写入速度，GB/s

2,076.1 11.8

测试中的平均数值

Kingston X2YH1K-MIE-NX 16GB

需要考虑的原因
Kingston X2YH1K-MIE-NX 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 59

左右 -64% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Kingston X2YH1K-MIE-NX 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 36
读取速度，GB/s

4,723.5 18.7
写入速度，GB/s

2,076.1 11.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

741 3238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT8G4SFS824A.C8FBD1 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M378A2K43BB1-CPB 16GB

Samsung M378A2K43BB1-CPB 16GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

SK Hynix HMA82GS6DJR8N-VK 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB

SK Hynix HMT41GS6MFR8C-PB 8GB

SK Hynix HMT41GS6MFR8C-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB