SK Hynix HYMP112U64CP8-S6 1GB vs Samsung M471A5143EB0-CPB 4GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 13.5

测试中的平均数值
更快的写入速度，GB/s

2,076.1 10.3

测试中的平均数值

Samsung M471A5143EB0-CPB 4GB

需要考虑的原因
Samsung M471A5143EB0-CPB 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 59

左右 -69% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Samsung M471A5143EB0-CPB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 35
读取速度，GB/s

4,723.5 13.5
写入速度，GB/s

2,076.1 10.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

741 2155

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX3200C18D4/8G 8GB

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Panram International Corporation M424016 4GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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AMD R5316G1609U2K 8GB

Samsung M378A4G43MB1-CTD 32GB

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Corsair CM4X16GD3200C16K2E 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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