SK Hynix HYMP112U64CP8-Y5 1GB vs Crucial Technology CT16G4S24AM.M16FE 16GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 16.9

测试中的平均数值

Crucial Technology CT16G4S24AM.M16FE 16GB

需要考虑的原因
Crucial Technology CT16G4S24AM.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 62

左右 -170% 更低的延时
更快的写入速度，GB/s

13.9 1,658.4

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Crucial Technology CT16G4S24AM.M16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 23
读取速度，GB/s

4,216.7 16.9
写入速度，GB/s

1,658.4 13.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

688 3081

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

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Corsair CMX8GX3M2A2000C9 4GB

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB

Kingston KVR16N11/8-SP 8GB

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Samsung M471A2K43CB1-CRC 16GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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Samsung M393A2G40EB2-CTD 16GB

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Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB