SK Hynix HYMP112U64CP8-Y5 1GB vs Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

需要考虑的原因
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 62

左右 -121% 更低的延时
更快的写入速度，GB/s

11.2 1,658.4

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 28
读取速度，GB/s

4,216.7 16.0
写入速度，GB/s

1,658.4 11.2
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

688 2901

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391A1G43EB1-CRC 8GB

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Corsair CM5S16GM4800A40K2 16GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT16G4DFD824A.C16FBR 16GB

Crucial Technology CT16G4DFD824A.C16FBR 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston KYXC0V-MIB 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

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Panram International Corporation PUD42400C154G2NJK 4GB