SK Hynix HYMP112U64CP8-Y5 1GB vs Kingston ACR26D4U9S8ME-8 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Kingston ACR26D4U9S8ME-8 8GB

Kingston ACR26D4U9S8ME-8 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值

Kingston ACR26D4U9S8ME-8 8GB

需要考虑的原因
Kingston ACR26D4U9S8ME-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 62

左右 -107% 更低的延时
更快的写入速度，GB/s

11.3 1,658.4

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Kingston ACR26D4U9S8ME-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 30
读取速度，GB/s

4,216.7 16.0
写入速度，GB/s

1,658.4 11.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

688 2901

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5173BH0-CH9 4GB

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Samsung M471A1K1KBB0-CPB 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Samsung M471A4G43BB1-CWE 32GB

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Kingston 9965589-008.D01G 8GB

Kingston 9965589-008.D01G 8GB

Kingston HP698651-154-MCN 8GB

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Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMW32GX4M4Z3200C16 8GB

Corsair CMW32GX4M4Z3200C16 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB