SK Hynix HYMP112U64CP8-Y5 1GB vs Samsung M378A1G43DB0-CPB 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 62

左右 -72% 更低的延时
更快的写入速度，GB/s

10.3 1,658.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Samsung M378A1G43DB0-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 36
读取速度，GB/s

4,216.7 15.0
写入速度，GB/s

1,658.4 10.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

688 2569

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 996902 2GB

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G Skill Intl F4-3200C14-16GTZN 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CM4X8GF2666Z16K4 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB