SK Hynix HYMP125S64CP8-S6 2GB vs Mushkin 99[2/7/4]209F 8GB

总分

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分

Mushkin 99[2/7/4]209F 8GB

Mushkin 99[2/7/4]209F 8GB

差异规格评论

差异

SK Hynix HYMP125S64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

4 13.4

测试中的平均数值
更快的写入速度，GB/s

2,013.5 10.3

测试中的平均数值

Mushkin 99[2/7/4]209F 8GB

需要考虑的原因
Mushkin 99[2/7/4]209F 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 68

左右 -143% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125S64CP8-S6 2GB

Mushkin 99[2/7/4]209F 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 28
读取速度，GB/s

4,402.8 13.4
写入速度，GB/s

2,013.5 10.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

701 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK64GX5M2B5200C40 32GB

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Kingston ACR16D3LS1NGG/2G 2GB

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Micron Technology 8ATF1G64AZ-2G3A1 8GB

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Corsair CMD8GX3M2A2800C12 4GB

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Corsair CM4B16G2L2666A18K2 16GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3600C16-8GTZ 8GB

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Micron Technology 72ASS8G72LZ-2G3B2 64GB

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Kingston 9965525-018.A00LF 4GB

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Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

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G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB