SK Hynix HYMP125U64CP8-S6 2GB vs Crucial Technology CT4G4SFS8213.C8FDD2 4GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 14.6

测试中的平均数值
更快的写入速度，GB/s

2,381.6 10.8

测试中的平均数值

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FDD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 60

左右 -122% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 27
读取速度，GB/s

5,082.2 14.6
写入速度，GB/s

2,381.6 10.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

925 2290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M393B1G70QH0-YK0 8GB

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King Tiger Technology TMKG8G3000C17(XMP) 8GB

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Samsung M471B1G73DB0-YK0 8GB

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Team Group Inc. TEAMGROUP-SD4-2666 16GB

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Mushkin MRA4S266GHHF32G 32GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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Corsair CMR32GX4M4D3000C16 8GB

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Kingston KVR16N11/8-SP 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-3600C16-16GTZR 16GB

G Skill Intl F4-3600C16-16GTZR 16GB