SK Hynix HYMP125U64CP8-S6 2GB vs V-GEN D4S8GL30A8TS5 8GB

总分

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

差异规格评论

差异

SK Hynix HYMP125U64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

5 18.3

测试中的平均数值

V-GEN D4S8GL30A8TS5 8GB

需要考虑的原因
V-GEN D4S8GL30A8TS5 8GB

报告一个错误

低于PassMark测试中的延时，ns

58 60

左右 -3% 更低的延时
更快的写入速度，GB/s

8.9 2,381.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125U64CP8-S6 2GB

V-GEN D4S8GL30A8TS5 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 58
读取速度，GB/s

5,082.2 18.3
写入速度，GB/s

2,381.6 8.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

925 2181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP125U64CP8-S6 2GB

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Kingston ACR256X64D3S1333C9 2GB

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Samsung M393B2G70BH0-YK0 16GB

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Kingston 9965516-112.A00LF 16GB

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Kingston KHX3600C17D4/16GX 16GB

Kingston KHX3600C17D4/16GX 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB