SK Hynix HYMP164U64CP6-Y5 512MB vs Corsair CMT128GX4M8X3600C18 16GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Corsair CMT128GX4M8X3600C18 16GB

Corsair CMT128GX4M8X3600C18 16GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 16.8

测试中的平均数值

Corsair CMT128GX4M8X3600C18 16GB

需要考虑的原因
Corsair CMT128GX4M8X3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 44

左右 -26% 更低的延时
更快的读取速度，GB/s

17.2 14

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Corsair CMT128GX4M8X3600C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 35
读取速度，GB/s

14,740.4 17.2
写入速度，GB/s

8,883.4 16.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2811 3225

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Transcend Information JM3200HLE-16G 16GB

Transcend Information JM3200HLE-16G 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMW32GX4M4C3466C16 8GB

Corsair CMW32GX4M4C3466C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Corsair CMK16GX4M2B4266C19 8GB

Corsair CMK16GX4M2B4266C19 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB