SK Hynix HYMP164U64CP6-Y5 512MB vs Micron Technology AFLD416EH1P 16GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的读取速度，GB/s

14 13.7

测试中的平均数值
更快的写入速度，GB/s

8,883.4 6.9

测试中的平均数值

Micron Technology AFLD416EH1P 16GB

需要考虑的原因
Micron Technology AFLD416EH1P 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 44

左右 -57% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Micron Technology AFLD416EH1P 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 28
读取速度，GB/s

14,740.4 13.7
写入速度，GB/s

8,883.4 6.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2811 2312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-8GTZSW 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston KHX3200C18D4/8G 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Crucial Technology CT8G4DFS8213.C8FDD1 8GB