SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Corsair CM4X4GF2400C16N2 4GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Corsair CM4X4GF2400C16N2 4GB

Corsair CM4X4GF2400C16N2 4GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 13.5

测试中的平均数值

Corsair CM4X4GF2400C16N2 4GB

需要考虑的原因
Corsair CM4X4GF2400C16N2 4GB

报告一个错误

低于PassMark测试中的延时，ns

76 117

左右 -54% 更低的延时
更快的写入速度，GB/s

7.3 2,303.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CM4X4GF2400C16N2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 76
读取速度，GB/s

3,094.8 13.5
写入速度，GB/s

2,303.7 7.3
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

784 1587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4400C19-16GVK 16GB

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AMD R538G1601U2S 8GB

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Crucial Technology CT8G4SFD824A.C16FBD1 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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G Skill Intl F4-2800C18-16GRS 16GB

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Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-3000C15-8GVGB 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Mushkin 99[2/7/4]192F 4GB

Mushkin 99[2/7/4]192F 4GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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Corsair CMK16GX4M4A2800C16 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMK64GX4M4B2800C14 16GB

Corsair CMK64GX4M4B2800C14 16GB