SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Corsair CMK8GX4M2B3866C18 4GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 15.8

测试中的平均数值
更快的写入速度，GB/s

2,303.7 13.4

测试中的平均数值

Corsair CMK8GX4M2B3866C18 4GB

需要考虑的原因
Corsair CMK8GX4M2B3866C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 117

左右 -318% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMK8GX4M2B3866C18 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 28
读取速度，GB/s

3,094.8 15.8
写入速度，GB/s

2,303.7 13.4
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

784 2640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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Micron Technology V-GeN D4V16GL24A8R 16GB

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EVGA 16G-D4-2666-MR 4GB

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PNY Electronics PNY 2GB

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EVGA 8GX-D4-3000-MR 8GB

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Kingston HX316C10F/8 8GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Kingston 99U5701-049.A00G 16GB

Kingston 99U5701-049.A00G 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB