SK Hynix HYMP31GF72CMP4D5Y5 8GB vs INTENSO 5641152 4GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

INTENSO 5641152 4GB

INTENSO 5641152 4GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 14.1

测试中的平均数值

INTENSO 5641152 4GB

需要考虑的原因
INTENSO 5641152 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 117

左右 -409% 更低的延时
更快的写入速度，GB/s

6.8 2,303.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

INTENSO 5641152 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 23
读取速度，GB/s

3,094.8 14.1
写入速度，GB/s

2,303.7 6.8
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

784 2215

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA451U7AFR8N-TF 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M393A4K40CB2-CTD 32GB

Samsung M386A4G40DM1-CRC 32GB

Samsung M386A4G40DM1-CRC 32GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

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Samsung M393B1G70QH0-YK0 8GB

Kingston KHX3200C20S4/8G 8GB

Kingston KHX3200C20S4/8G 8GB