SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Kingston KMKYF9-HYA 8GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值
更快的写入速度，GB/s

2,303.7 12.8

测试中的平均数值

Kingston KMKYF9-HYA 8GB

需要考虑的原因
Kingston KMKYF9-HYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 117

左右 -409% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston KMKYF9-HYA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 23
读取速度，GB/s

3,094.8 16.9
写入速度，GB/s

2,303.7 12.8
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

784 2899

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5773DH0-CH9 2GB

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Corsair CMN16GX4M2Z3200C16 8GB

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Elpida EBJ41UF8BCS0-DJ-F 4GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Patriot Memory (PDP Systems) 3200 C16 Series 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-2933C14-8GFX 8GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

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Samsung M378A2G43MB1-CTD 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

King Tiger Technology Tigo-2400MHz-8G 8GB

King Tiger Technology Tigo-2400MHz-8G 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB