SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Patriot Memory (PDP Systems) PSD416G21332S 16GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 10.3

测试中的平均数值

Patriot Memory (PDP Systems) PSD416G21332S 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G21332S 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 117

左右 -290% 更低的延时
更快的写入速度，GB/s

9.5 2,303.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 30
读取速度，GB/s

3,094.8 10.3
写入速度，GB/s

2,303.7 9.5
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

784 1651

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Gloway International Co. Ltd. TYP4U3000E16082C 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMK16GX4M2Z2400C16 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Avant Technology J642GU42J7240N2 16GB

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Samsung 1600 CL10 Series 8GB

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Micron Technology 72ASS8G72LZ-2G6D2 64GB

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Kingston KF560C40-16 16GB

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Samsung M471A5644EB0-CPB 2GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Apacer Technology 78.C1GQB.4032B 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMWX8GF2933Z19W8 8GB

Corsair CMWX8GF2933Z19W8 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

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Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

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Crucial Technology CT4G4DFS8213.C8FHP 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB