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SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M391A1K43BB2-CTD 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB vs Samsung M391A1K43BB2-CTD 8GB

总分
star star star star star
SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分
star star star star star
Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

差异 规格 评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB 需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.5
    测试中的平均数值
Samsung M391A1K43BB2-CTD 8GB 需要考虑的原因
Samsung M391A1K43BB2-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    64 left arrow 117
    左右 -83% 更低的延时
  • 更快的写入速度，GB/s
    9.3 left arrow 2,303.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M391A1K43BB2-CTD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    117 left arrow 64
  • 读取速度，GB/s
    3,094.8 left arrow 17.5
  • 写入速度，GB/s
    2,303.7 left arrow 9.3
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    784 left arrow 2205

SK Hynix HYMP31GF72CMP4D5Y5 8GB RAM的比较

takeMS International AG TMS2GS264D081805AW 2GB
Kingston 9905315-124.A00LF 1GB

Samsung M391A1K43BB2-CTD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 99U5700-032.A00G 16GB
Kingston 99U5700-032.A00G 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK32GX4M2C3200C18 16GB
Corsair CMK32GX4M2C3200C18 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Essencore Limited KD48GU881-26N190A 8GB
Essencore Limited KD48GU881-26N190A 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK8GX4M2B3200C16 4GB
Corsair CMK8GX4M2B3200C16 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMK16GX4M2Z2400C16 8GB
Corsair CMK16GX4M2Z2400C16 8GB
内存RAM