SK Hynix HYMP512S64CP8-Y5 1GB vs Kingston 9905711-002.A00G 4GB

总分

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

总分

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB

差异规格评论

差异

SK Hynix HYMP512S64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512S64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

Kingston 9905711-002.A00G 4GB

需要考虑的原因
Kingston 9905711-002.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 68

左右 -196% 更低的延时
更快的写入速度，GB/s

11.3 1,670.7

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512S64CP8-Y5 1GB

Kingston 9905711-002.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 23
读取速度，GB/s

3,554.9 16.0
写入速度，GB/s

1,670.7 11.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

513 2371

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF1G72PDZ-2G3A2 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Mushkin MES4S213FF16G28 16GB

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SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB

Samsung M3 78T2863QZS-CF7 1GB

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Micron Technology 16ATF2G64HZ-2G3B1 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Corsair CMT64GX4M4C3000C15 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMSO8GX4M1A2133C15 8GB

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Corsair CMD32GX4M4B3466C16 8GB

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Samsung M378B5273DH0-CH9 4GB

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Kingston HP26D4U9S1ME-4 4GB