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Smart Modular SF564128CJ8N6NNSEG 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB vs A-DATA Technology AO1P21FC8T1-BSKS 8GB

总分
star star star star star
Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分
star star star star star
A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

差异 规格 评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB 需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 36
    左右 3% 更低的延时
A-DATA Technology AO1P21FC8T1-BSKS 8GB 需要考虑的原因
A-DATA Technology AO1P21FC8T1-BSKS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.6 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Smart Modular SF564128CJ8N6NNSEG 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 36
  • 读取速度，GB/s
    12.3 left arrow 13.6
  • 写入速度，GB/s
    7.3 left arrow 8.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1570 left arrow 2231

Smart Modular SF564128CJ8N6NNSEG 4GB RAM的比较

Smart Modular SH564128FH8N6TNSQG 4GB
Corsair CMK8GX4M1E3200C16 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Smart Modular SF564128CJ8N6NNSEG 4GB
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Corsair CMZ16GX3M2A1866C9 8GB
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内存RAM
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内存RAM
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