Smart Modular SF564128CJ8N6NNSEG 4GB vs Crucial Technology BLS16G4D30CEST.16FD 16GB

总分

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分

Crucial Technology BLS16G4D30CEST.16FD 16GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

差异规格评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB

需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB

报告一个错误

Crucial Technology BLS16G4D30CEST.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4D30CEST.16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 -21% 更低的延时
更快的读取速度，GB/s

17.4 12.3

测试中的平均数值
更快的写入速度，GB/s

13.5 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Smart Modular SF564128CJ8N6NNSEG 4GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 29
读取速度，GB/s

12.3 17.4
写入速度，GB/s

7.3 13.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1570 3413

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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