Smart Modular SF564128CJ8N6NNSEG 4GB vs G Skill Intl F4-3200C14-8GTZR 8GB

总分

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

总分

G Skill Intl F4-3200C14-8GTZR 8GB

G Skill Intl F4-3200C14-8GTZR 8GB

差异规格评论

差异

Smart Modular SF564128CJ8N6NNSEG 4GB

需要考虑的原因
Smart Modular SF564128CJ8N6NNSEG 4GB

报告一个错误

G Skill Intl F4-3200C14-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 35

左右 -35% 更低的延时
更快的读取速度，GB/s

19.4 12.3

测试中的平均数值
更快的写入速度，GB/s

15.6 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SF564128CJ8N6NNSEG 4GB

G Skill Intl F4-3200C14-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 26
读取速度，GB/s

12.3 19.4
写入速度，GB/s

7.3 15.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1570 3756

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-8GTZR 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Crucial Technology CT16G4SFD832A.C16FJ 16GB

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SK Hynix HMA41GS6AFR8N-TF 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

Samsung 1600 CL10 Series 8GB

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Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Samsung M378A1G43DB0-CPB 8GB

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SK Hynix HMA82GS6JJR8N-VK 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D240FSA.8FAD 4GB

Crucial Technology BLS4G4D240FSA.8FAD 4GB