Smart Modular SH564128FH8NZQNSCG 4GB vs G Skill Intl F4-2133C15-4GVR 4GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

G Skill Intl F4-2133C15-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GVR 4GB

报告一个错误

更快的读取速度，GB/s

15 9.4

测试中的平均数值
更快的写入速度，GB/s

10.3 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-2133C15-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

9.4 15.0
写入速度，GB/s

5.5 10.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1453 2478

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M393B1K70CH0-YH9 8GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

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G Skill Intl F4-3000C14-8GTZ 8GB

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Corsair CMW32GX4M2E3200C16 16GB

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Kingston HX318C10FK/4 4GB

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Crucial Technology CT8G4SFD824A.C16FF 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

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Crucial Technology CT25664BA160B.C16F 2GB

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G Skill Intl F4-3600C16-16GTZN 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Kingston ACR26D4U9S8ME-8 8GB

Kingston ACR26D4U9S8ME-8 8GB