Smart Modular SH564128FH8NZQNSCG 4GB vs G Skill Intl F4-3600C19-8GSXKB 8GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

G Skill Intl F4-3600C19-8GSXKB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GSXKB 8GB

报告一个错误

更快的读取速度，GB/s

18.6 9.4

测试中的平均数值
更快的写入速度，GB/s

15.4 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-3600C19-8GSXKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

9.4 18.6
写入速度，GB/s

5.5 15.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1453 3519

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 99U5428-018.A00LF 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3200C14-16GTRG 16GB

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Samsung M471A2K43BB1-CTD 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Apacer Technology 78.DAGQ7.40B0B 16GB

Apacer Technology 78.DAGQ7.40B0B 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Qimonda 72T128420EFA3SB2 1GB

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Ramaxel Technology RMSA3310ME96HAF-3200 8GB

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Kingston 9905458-017.A01LF 4GB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB