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SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3600C14-8GTRGB 8GB

SpecTek Incorporated ?????????????????? 2GB vs G Skill Intl F4-3600C14-8GTRGB 8GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.1
    测试中的平均数值
G Skill Intl F4-3600C14-8GTRGB 8GB 需要考虑的原因
G Skill Intl F4-3600C14-8GTRGB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 54
    左右 -64% 更低的延时
  • 更快的写入速度，GB/s
    11.6 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3600C14-8GTRGB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 33
  • 读取速度，GB/s
    4,269.3 left arrow 17.1
  • 写入速度，GB/s
    1,781.8 left arrow 11.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    618 left arrow 2806

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

G Skill Intl F4-3600C14-8GTRGB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3600C14-8GTRGB 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M2B3600C18 8GB
Corsair CMD16GX4M2B3600C18 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-8GTZRX 8GB
G Skill Intl F4-3200C14-8GTZRX 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
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Crucial Technology BLT8G4D30AETA.K16FE 8GB
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Kingston KVR533D2N4 512MB
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Corsair CMK16GX4M4A2133C13 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Kingston KHX2666C16D4/16GX 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3000C16-8GSXFB 8GB
G Skill Intl F4-3000C16-8GSXFB 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Samsung M393A1G40DB0-B`B 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology D12.2356WS.001 8GB
Apacer Technology D12.2356WS.001 8GB
内存RAM
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
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Corsair CMK32GX4M2Z4000C18 16GB
内存RAM