SpecTek Incorporated ?????????????????? 2GB vs G Skill Intl F4-3600C16-8GTZN 8GB

总分

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

差异规格评论

差异

SpecTek Incorporated ?????????????????? 2GB

需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB

报告一个错误

更快的读取速度，GB/s

4 21

测试中的平均数值

G Skill Intl F4-3600C16-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 54

左右 -125% 更低的延时
更快的写入速度，GB/s

17.8 1,781.8

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-3600C16-8GTZN 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 24
读取速度，GB/s

4,269.3 21.0
写入速度，GB/s

1,781.8 17.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

618 4006

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.D2GFH.4030B 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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Kingston 9965589-037.D00G 8GB

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Samsung M471A5244CB0-CWE 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Micron Technology TEAMGROUP-UD4-3000 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFS824A.M8FA 8GB

Crucial Technology CT8G4DFS824A.M8FA 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Kingston ACR24D4S7S8MB-8 8GB

Kingston ACR24D4S7S8MB-8 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Transcend Information JM3200HLB-16G 16GB

Transcend Information JM3200HLB-16G 16GB