STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Corsair CM4X8GF2400C16N2 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Corsair CM4X8GF2400C16N2 8GB

Corsair CM4X8GF2400C16N2 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值

Corsair CM4X8GF2400C16N2 8GB

需要考虑的原因
Corsair CM4X8GF2400C16N2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 63

左右 -133% 更低的延时
更快的写入速度，GB/s

9.4 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CM4X8GF2400C16N2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 27
读取速度，GB/s

3,231.0 16.1
写入速度，GB/s

1,447.3 9.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 2607

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M1B3000C15 16GB

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Kingston 9905403-061.A00LF 2GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston KCRXJ6-MIE 16GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Crucial Technology CT32G4SFD832A.M16FB 32GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

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Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB