STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Dust Leopard DDR4-2400 C16 8GB 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 20.2

测试中的平均数值

Dust Leopard DDR4-2400 C16 8GB 8GB

需要考虑的原因
Dust Leopard DDR4-2400 C16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

53 63

左右 -19% 更低的延时
更快的写入速度，GB/s

11.9 1,447.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Dust Leopard DDR4-2400 C16 8GB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 53
读取速度，GB/s

3,231.0 20.2
写入速度，GB/s

1,447.3 11.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

478 2476

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 4133 C19 Series 8GB

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Samsung M393B1G70BH0-CK0 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

V-Color Technology Inc. TA48G32S816SK 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston X5H5PW-MIE 8GB

Kingston X5H5PW-MIE 8GB

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Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB