STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3000C14-8GTZ 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

G Skill Intl F4-3000C14-8GTZ 8GB

G Skill Intl F4-3000C14-8GTZ 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 17.9

测试中的平均数值

G Skill Intl F4-3000C14-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3000C14-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 63

左右 -163% 更低的延时
更快的写入速度，GB/s

13.6 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3000C14-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 24
读取速度，GB/s

3,231.0 17.9
写入速度，GB/s

1,447.3 13.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 3346

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173QH0-YK0 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CMSX32GX4M2A2400C16 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Samsung M393B5270CH0-CH9 4GB

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SK Hynix HMA82GU6CJR8N-VK 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Samsung M471A2K43CB1-CRCR 16GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT16G4DFRA32A.C8FB 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

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Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Samsung M391A1G43DB0-CPB 8GB

Samsung M391A1G43DB0-CPB 8GB

Kingston HP32D4S2S1ME-4 4GB

Kingston HP32D4S2S1ME-4 4GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Apacer Technology 78.CAGR4.40C0B 8GB

Apacer Technology 78.CAGR4.40C0B 8GB

Kingston 9905320-021.A00LF 1GB

Kingston 9905320-021.A00LF 1GB

Crucial Technology CT16G4SFS8266.C8FE 16GB

Crucial Technology CT16G4SFS8266.C8FE 16GB